[amp_mcq option1=”Amplifier circuits” option2=”Switching circuits” option3=”Rectifier circuits” option4=”None of the above” correct=”option1″]
Detailed SolutionThe base resistor method is generally used in
[amp_mcq option1=”Amplifier circuits” option2=”Switching circuits” option3=”Rectifier circuits” option4=”None of the above” correct=”option1″]
Detailed SolutionThe base resistor method is generally used in
[amp_mcq option1=”Operating point” option2=”Current gain” option3=”Voltage gain” option4=”None of the above” correct=”option1″]
Detailed SolutionThe point of intersection of d.c. and a.c. load lines represents ___________
[amp_mcq option1=”Both voltage and current amplification” option2=”Voltage amplifications” option3=”Current amplification” option4=”None of the above” correct=”option4″]
Detailed SolutionIn parallel resonance, there is ___________
[amp_mcq option1=”Minimum” option2=”Maximum” option3=”Half-way between maximum and minimum” option4=”Zero” correct=”option1″]
Detailed SolutionThe voltage gain of a tuned amplifier is ___________ at resonant frequency
[amp_mcq option1=”100 mA” option2=”10.1 mA” option3=”110 mA” option4=”none of the above” correct=”option3″]
Detailed SolutionIn a transistor if à = 100 and collector current is 10 mA, then IE is ___________
[amp_mcq option1=”1″ option2=”less than 1″ option3=”between 20 and 500″ option4=”above 500″ correct=”option3″]
Detailed SolutionThe value of à for a transistor is generally ___________
[amp_mcq option1=”common emitter” option2=”common base” option3=”common collector” option4=”none of the above” correct=”option1″]
Detailed SolutionThe power gain in a transistor connected in ___________ arrangement is the highest
[amp_mcq option1=”140 kHz , 60 kHz” option2=”1020 kHz , 980 kHz” option3=”1030 kHz , 970 kHz” option4=”None of the above” correct=”option4″]
Detailed SolutionIn the above question, what are the values of cut-off frequencies?
[amp_mcq option1=”10 IB” option2=”3 IB” option3=”2 IB” option4=”4 IB” correct=”option3″]
[amp_mcq option1=”a reverse bias” option2=”a wide depletion layer” option3=”low resistance” option4=”none of the above” correct=”option1″]
Detailed SolutionAt the base emitter junctions of a transistor, one finds ___________