Transistors

1. The base resistor method is generally used in

Amplifier circuits
Switching circuits
Rectifier circuits
None of the above

Detailed SolutionThe base resistor method is generally used in

2. The point of intersection of d.c. and a.c. load lines represents ___________

Operating point
Current gain
Voltage gain
None of the above

Detailed SolutionThe point of intersection of d.c. and a.c. load lines represents ___________

3. In parallel resonance, there is ___________

Both voltage and current amplification
Voltage amplifications
Current amplification
None of the above

Detailed SolutionIn parallel resonance, there is ___________

4. The voltage gain of a tuned amplifier is ___________ at resonant frequency

Minimum
Maximum
Half-way between maximum and minimum
Zero

Detailed SolutionThe voltage gain of a tuned amplifier is ___________ at resonant frequency

5. In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

100 mA
10.1 mA
110 mA
none of the above

Detailed SolutionIn a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

6. The value of ß for a transistor is generally ___________

1
less than 1
between 20 and 500
above 500

Detailed SolutionThe value of ß for a transistor is generally ___________

7. The power gain in a transistor connected in ___________ arrangement is the highest

common emitter
common base
common collector
none of the above

Detailed SolutionThe power gain in a transistor connected in ___________ arrangement is the highest

8. In the above question, what are the values of cut-off frequencies?

140 kHz , 60 kHz
1020 kHz , 980 kHz
1030 kHz , 970 kHz
None of the above

Detailed SolutionIn the above question, what are the values of cut-off frequencies?

9. For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

10 IB
3 IB
2 IB
4 IB

Detailed SolutionFor good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

10. At the base emitter junctions of a transistor, one finds ___________

a reverse bias
a wide depletion layer
low resistance
none of the above

Detailed SolutionAt the base emitter junctions of a transistor, one finds ___________

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