21. The disadvantage of base resistor method of transistor biasing is that it ___________

Is complicated
Is sensitive to changes in ß
Provides high stability
None of the above

Detailed SolutionThe disadvantage of base resistor method of transistor biasing is that it ___________

22. The emitter of a transistor is ___________ doped

lightly
heavily
moderately
none of the above

Detailed SolutionThe emitter of a transistor is ___________ doped

23. An ideal value of stability factor is ___________

100
200
More than 200
1

Detailed SolutionAn ideal value of stability factor is ___________

24. At series resonance, the net reactive component of circuit current is ___________

Zero
Inductive
Capacitive
None of the above

Detailed SolutionAt series resonance, the net reactive component of circuit current is ___________

25. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________

100 µA
25 µA
20 µA
50 µA

Detailed SolutionThe biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________

26. The dimensions of L/CR are that of ___________

Farad
Henry
Ohm
None of the above

Detailed SolutionThe dimensions of L/CR are that of ___________

27. The element that has the biggest size in a transistor is ___________

collector
base
emitter
collector-base-junction

Detailed SolutionThe element that has the biggest size in a transistor is ___________

28. If the value of collector current IC increases, then the value of VCE ___________

Remains the same
Decreases
Increases
None of the above

Detailed SolutionIf the value of collector current IC increases, then the value of VCE ___________

29. At series resonance, the circuit offers ___________ impedance

Zero
Maximum
Minimum
None of the above

Detailed SolutionAt series resonance, the circuit offers ___________ impedance

30. The number of depletion layers in a transistor is ___________

four
three
one
two

Detailed SolutionThe number of depletion layers in a transistor is ___________