Transistors

11. When the temperature changes, the operating point is shifted due to .

Change in ICBO
Change in VCC
Change in the values of circuit resistance
None of the above

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24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z"/> Subscribe on YouTube
shifted due to ." class="read-more button" href="https://exam.pscnotes.com/mcq/when-the-temperature-changes-the-operating-point-is-shifted-due-to/#more-57887">Detailed SolutionWhen the temperature changes, the operating point is shifted due to .

12. A transistor is a ___________ operated device

current
voltage
both voltage and current
none of the above

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class="read-more button" href="https://exam.pscnotes.com/mcq/a-transistor-is-a-___________-operated-device/#more-57790">Detailed SolutionA transistor is a ___________ operated device

13. A heat sink is generally used with a transistor to ___________

increase the forward current
decrease the forward current
compensate for excessive doping
prevent excessive temperature rise

Detailed

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81.2-142.7 81.2z"/> Subscribe on YouTube
SolutionA heat sink is generally used with a transistor to ___________

14. BC 147 transistor indicates that it is made of ___________

germanium
silicon
carbon
none of the above

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24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z"/> Subscribe on YouTube href="https://exam.pscnotes.com/mcq/bc-147-transistor-indicates-that-it-is-made-of-___________/#more-57716">Detailed SolutionBC 147 transistor indicates that it is made of ___________

15. The value of VBE ___________

Depends upon IC to moderate extent
Is almost independent of IC
Is strongly dependant on IC
None of the above

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0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z"/> Subscribe on YouTube of VBE ___________" class="read-more button" href="https://exam.pscnotes.com/mcq/the-value-of-vbe-___________/#more-57690">Detailed SolutionThe value of VBE ___________

16. The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

One hundredth
One tenth
One thousandth
One millionth

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___________ the leakage current in a germanium transistor" class="read-more button" href="https://exam.pscnotes.com/mcq/the-leakage-current-in-a-silicon-transistor-is-about-___________-the-leakage-current-in-a-germanium-transistor/#more-57647">Detailed SolutionThe leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

17. At parallel resonance, the line current is ___________

Minimum
Maximum
Quite large
None of the above

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button" href="https://exam.pscnotes.com/mcq/at-parallel-resonance-the-line-current-is-___________/#more-57444">Detailed SolutionAt parallel resonance, the line current is ___________

18. Tuned class C amplifiers are used for RF signals of ___________

Low power
High power
Very high power
None of the above

Detailed

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SolutionTuned class C amplifiers are used for RF signals of ___________

19. The current IB is ___________

electron current
hole current
donor ion current
acceptor ion current

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___________" class="read-more button" href="https://exam.pscnotes.com/mcq/the-current-ib-is-___________/#more-57156">Detailed SolutionThe current IB is ___________

20. The operating point ___________ on the a.c. load line

Also line
Does not lie
May or may not lie
Data insufficient

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load line" class="read-more button" href="https://exam.pscnotes.com/mcq/the-operating-point-___________-on-the-a-c-load-line/#more-57116">Detailed SolutionThe operating point ___________ on the a.c. load line

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