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21. The disadvantage of base resistor method of transistor biasing is that it ___________

Is complicated

Is sensitive to changes in Ã

Provides high stability

None of the above

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22. The emitter of a transistor is ___________ doped

lightly

heavily

moderately

none of the above

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23. An ideal value of stability factor is ___________

100

200

More than 200

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24. At series resonance, the net reactive component of circuit current is ___________

Zero

Inductive

Capacitive

None of the above

Detailed SolutionAt

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series resonance, the net reactive component of circuit current is ___________

25. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 ÂµA, then IC will change by ___________

100 ÂµA

25 ÂµA

20 ÂµA

50 ÂµA

Detailed SolutionThe biasing circuit has a stability factor of 50. If due to temperature change, ICBO

changes by 1 ÂµA, then IC will change by ___________

26. The dimensions of L/CR are that of ___________

Farad

Henry

Ohm

None of the above

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27. The element that has the biggest size in a transistor is ___________

collector

base

emitter

collector-base-junction

Detailed SolutionThe element

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that has the biggest size in a transistor is ___________

28. If the value of collector current IC increases, then the value of VCE ___________

Remains the same

Decreases

Increases

None of the above

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