Transistors

51. The base resistor method is generally used in

Amplifier circuits
Switching circuits
Rectifier circuits
None of the above

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href="https://exam.pscnotes.com/mcq/the-base-resistor-method-is-generally-used-in/#more-52145">Detailed SolutionThe base resistor method is generally used in

52. The point of intersection of d.c. and a.c. load lines represents ___________

Operating point
Current gain
Voltage gain
None of the above

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6.3-42 24.9-48.3 48.6-11.4 42.9-11.4 132.3-11.4 132.3s0 89.4 11.4 132.3c6.3 23.7 24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z"/> Subscribe on YouTube
button" href="https://exam.pscnotes.com/mcq/the-point-of-intersection-of-d-c-and-a-c-load-lines-represents-___________/#more-52015">Detailed SolutionThe point of intersection of d.c. and a.c. load lines represents ___________

53. In parallel resonance, there is ___________

Both voltage and current amplification
Voltage amplifications
Current amplification
None of the above

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64 74.6 75.5c-23.5 6.3-42 24.9-48.3 48.6-11.4 42.9-11.4 132.3-11.4 132.3s0 89.4 11.4 132.3c6.3 23.7 24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z"/> Subscribe on YouTube is ___________" class="read-more button" href="https://exam.pscnotes.com/mcq/in-parallel-resonance-there-is-___________/#more-51608">Detailed SolutionIn parallel resonance, there is ___________

54. The voltage gain of a tuned amplifier is ___________ at resonant frequency

Minimum
Maximum
Half-way between maximum and minimum
Zero

Detailed SolutionThe voltage

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gain of a tuned amplifier is ___________ at resonant frequency

55. In a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

100 mA
10.1 mA
110 mA
none of the above

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is 10 mA, then IE is ___________" class="read-more button" href="https://exam.pscnotes.com/mcq/in-a-transistor-if-a%c2%9f-100-and-collector-current-is-10-ma-then-ie-is-___________/#more-51400">Detailed SolutionIn a transistor if ß = 100 and collector current is 10 mA, then IE is ___________

56. The value of ß for a transistor is generally ___________

1
less than 1
between 20 and 500
above 500

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href="https://exam.pscnotes.com/mcq/the-value-of-a%c2%9f-for-a-transistor-is-generally-___________/#more-51342">Detailed SolutionThe value of ß for a transistor is generally ___________

57. The power gain in a transistor connected in ___________ arrangement is the highest

common emitter
common base
common collector
none of the above

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is the highest" class="read-more button" href="https://exam.pscnotes.com/mcq/the-power-gain-in-a-transistor-connected-in-___________-arrangement-is-the-highest/#more-50861">Detailed SolutionThe power gain in a transistor connected in ___________ arrangement is the highest

58. In the above question, what are the values of cut-off frequencies?

140 kHz , 60 kHz
1020 kHz , 980 kHz
1030 kHz , 970 kHz
None of the above

Detailed

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SolutionIn the above question, what are the values of cut-off frequencies?

59. For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

10 IB
3 IB
2 IB
4 IB

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R2 should be equal to or greater than" class="read-more button" href="https://exam.pscnotes.com/mcq/for-good-stabilsation-in-voltage-divider-bias-the-current-i1-flowing-through-r1-and-r2-should-be-equal-to-or-greater-than/#more-50587">Detailed SolutionFor good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

60. At the base emitter junctions of a transistor, one finds ___________

a reverse bias
a wide depletion layer
low resistance
none of the above

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transistor, one finds ___________" class="read-more button" href="https://exam.pscnotes.com/mcq/at-the-base-emitter-junctions-of-a-transistor-one-finds-___________/#more-50487">Detailed SolutionAt the base emitter junctions of a transistor, one finds ___________
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