The chemical used for shielding the active areas to achieve selective oxide growth is? A. Silver Nitride B. Silicon Nitride C. Hydrofluoric acid D. Polysilicon

Silver Nitride
Silicon Nitride
Hydrofluoric acid
Polysilicon

The correct answer is B. Silicon Nitride.

Silicon nitride (Si3N4) is a ceramic material that is used as a dielectric in semiconductor devices. It is also used as a barrier layer to protect the active areas of a semiconductor device from etching or oxidation.

Silver nitride (Ag3N) is a white, crystalline solid that is used as a catalyst and in the production of silver metal. It is also used as a semiconductor material.

Hydrofluoric acid (HF) is a strong acid that is used to etch silicon and other materials. It is also used in the production of aluminum and other metals.

Polysilicon (Si) is a semiconductor material that is used in the fabrication of integrated circuits. It is also used in solar cells and other applications.

In the process of selective oxide growth, a chemical is used to shield the active areas of a semiconductor device from etching or oxidation. This allows the oxide to grow only in the desired areas. Silicon nitride is the most common chemical used for this purpose. It is a very effective barrier layer that can withstand the high temperatures and chemicals used in the fabrication process.