The chemical used for shielding the active areas to achieve selective oxide growth is? A. Silver Nitride B. Silicon Nitride C. Hydrofluoric acid D. Polysilicon

[amp_mcq option1=”Silver Nitride” option2=”Silicon Nitride” option3=”Hydrofluoric acid” option4=”Polysilicon” correct=”option2″]

The correct answer is B. Silicon Nitride.

Silicon nitride (Si3N4) is a ceramic material that is used as a dielectric in semiconductor devices. It is also used as a barrier layer to protect the active areas of a semiconductor device from etching or oxidation.

Silver nitride (Ag3N) is a white, crystalline solid that is used as a catalyst and in the production of silver metal. It is also used as a semiconductor material.

Hydrofluoric acid (HF) is a strong acid that is used to etch silicon and other materials. It is also used in the production of aluminum and other metals.

Polysilicon (Si) is a semiconductor material that is used in the fabrication of integrated circuits. It is also used in solar cells and other applications.

In the process of selective oxide growth, a chemical is used to shield the active areas of a semiconductor device from etching or oxidation. This allows the oxide to grow only in the desired areas. Silicon nitride is the most common chemical used for this purpose. It is a very effective barrier layer that can withstand the high temperatures and chemicals used in the fabrication process.

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