[amp_mcq option1=”more than” option2=”less than” option3=”the same as” option4=”none of the above” correct=”option2″]<\/p>\n
The correct answer is: B. less than<\/strong><\/p>\n The leakage current in CE arrangement is less than that in CB arrangement. This is because the base-emitter junction in a CE configuration is reverse-biased, while the base-collector junction is forward-biased. The reverse-biased junction has a higher resistance than the forward-biased junction, so less current flows through it.<\/p>\n The leakage current in a transistor is the current that flows through the transistor even when there is no input signal applied. It is caused by the movement of minority carriers across the depletion region of the transistor’s junctions. The leakage current is typically very small, but it can be significant in some applications.<\/p>\n The leakage current in a CE configuration is less than that in a CB configuration because the base-emitter junction in a CE configuration is reverse-biased, while the base-collector junction is forward-biased. The reverse-biased junction has a higher resistance than the forward-biased junction, so less current flows through it.<\/p>\n The leakage current in a transistor can be reduced by using a transistor with a lower leakage current rating. It can also be reduced by operating the transistor at a lower temperature.<\/p>\n","protected":false},"excerpt":{"rendered":" [amp_mcq option1=”more than” option2=”less than” option3=”the same as” option4=”none of the above” correct=”option2″]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[970],"tags":[],"class_list":["post-50251","post","type-post","status-publish","format-standard","hentry","category-transistors","no-featured-image-padding"],"yoast_head":"\n