{"id":19862,"date":"2024-04-15T05:45:15","date_gmt":"2024-04-15T05:45:15","guid":{"rendered":"https:\/\/exam.pscnotes.com\/mcq\/?p=19862"},"modified":"2024-04-15T05:45:15","modified_gmt":"2024-04-15T05:45:15","slug":"nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop","status":"publish","type":"post","link":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/","title":{"rendered":"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level"},"content":{"rendered":"<p>\r\n    <!-- Check if it's an AMP page -->\r\n            <!-- Non-AMP version -->\r\n        <div class=\"mcq-container\" data-quiz-id=\"quizState_6a98458fbf0fc\">\r\n                                            <div class=\"option\" data-option-key=\"option1\" data-is-correct=\"false\">\r\n                    p-type substrate of high doping level                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option2\" data-is-correct=\"false\">\r\n                    n-type substrate of low doping level                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option3\" data-is-correct=\"false\">\r\n                    p-type substrate of moderate doping level                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option4\" data-is-correct=\"true\">\r\n                    n-type substrate of high doping level                <\/div>\r\n                            \r\n            <!-- Feedback messages for non-AMP -->\r\n            <div class=\"feedback\" data-feedback=\"wrong\">Answer is Right!<\/div>\r\n            <div class=\"feedback\" data-feedback=\"right\">Answer is Wrong!<\/div>\r\n        <\/div>\r\n\r\n        <script>\r\n        document.addEventListener('DOMContentLoaded', function () {\r\n            var containers = document.querySelectorAll('.mcq-container');\r\n\r\n            containers.forEach(function(container) {\r\n                var options = container.querySelectorAll('.option');\r\n                var feedbackSelect = container.querySelector('[data-feedback=\"select\"]');\r\n                var feedbackWrong = container.querySelector('[data-feedback=\"wrong\"]');\r\n                var feedbackRight = container.querySelector('[data-feedback=\"right\"]');\r\n\r\n                options.forEach(function(option) {\r\n                    option.addEventListener('click', function() {\r\n                        var selectedOption = option.getAttribute('data-option-key');\r\n                        var isCorrect = option.getAttribute('data-is-correct') === 'true';\r\n\r\n                        \/\/ Remove previous selections\r\n                        options.forEach(function(opt) {\r\n                            opt.classList.remove('correct', 'incorrect');\r\n                        });\r\n\r\n                        \/\/ Add the correct\/incorrect class\r\n                        if (isCorrect) {\r\n                            option.classList.add('correct');\r\n                            feedbackRight.hidden = false;\r\n                            feedbackWrong.hidden = true;\r\n                        } else {\r\n                            option.classList.add('incorrect');\r\n                            feedbackRight.hidden = true;\r\n                            feedbackWrong.hidden = false;\r\n                        }\r\n\r\n                        \/\/ Hide select feedback\r\n                        feedbackSelect.hidden = true;\r\n                    });\r\n                });\r\n            });\r\n        });\r\n        <\/script>\r\n    \r\n    <!--more--><\/p>\n<p>The correct answer is: <strong>D. n-type substrate of high doping level<\/strong>.<\/p>\n<p>An nMOSFET (n-channel metal-oxide-semiconductor field-effect transistor) is a type of transistor that uses an n-type semiconductor material as its channel. The channel is a thin layer of semiconductor material that is sandwiched between two insulating layers, called the gate oxide and the substrate. The gate oxide is a thin layer of silicon dioxide that separates the channel from the gate electrode. The substrate is the underlying semiconductor material that the channel is formed on.<\/p>\n<p>The nMOSFET is a type of field-effect transistor (FET), which means that it is controlled by an electric field. The electric field is created by applying a voltage to the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that attracts electrons to the channel. This causes the channel to become conductive, allowing current to flow through the transistor.<\/p>\n<p>The nMOSFET is a very versatile device that can be used in a variety of applications, including digital <div class=\"youtube-subscribe-container\">\r\n        <a href=\"https:\/\/www.youtube.com\/channel\/UCNHT8lW-JmLC68rjBfZhdkg?sub_confirmation=1\" target=\"_blank\" class=\"youtube-subscribe-button\">\r\n            <span class=\"youtube-icon\">\r\n                <svg xmlns=\"http:\/\/www.w3.org\/2000\/svg\" viewBox=\"0 0 576 512\">\r\n                    <path d=\"M549.7 124.1c-6.3-23.7-24.8-42.3-48.3-48.6C458.8 64 288 64 <div class=\"telegram-channel-container\">\r\n        <a href=\"https:\/\/t.me\/pscnotes2025\" target=\"_blank\" class=\"telegram-channel-button\">\r\n            <span class=\"telegram-icon\">\r\n                <svg xmlns=\"http:\/\/www.w3.org\/2000\/svg\" viewBox=\"0 0 496 512\">\r\n                    <path fill=\"white\" d=\"M248,8C111,8,0,119,0,256s111,248,248,248s248-111,248-248S385,8,248,8z M362,177L320,367c-3,14-10,18-20,14l-56-41l-27,26 c-3,3-5,5-10,5l4-63L323,196c5-5-1-7-8-3l-98,62l-42-13c-9-3-10-9,2-14l162-63C351,160,365,164,362,177z\"\/>\r\n                <\/svg>\r\n            <\/span>\r\n            Join Our Telegram Channel\r\n        <\/a>\r\n    <\/div> 288 64S117.2 64 74.6 75.5c-23.5 6.3-42 24.9-48.3 48.6-11.4 42.9-11.4 132.3-11.4 132.3s0 89.4 11.4 132.3c6.3 23.7 24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z\"\/>\r\n                <\/svg>\r\n            <\/span>\r\n            Subscribe on YouTube\r\n        <\/a>\r\n    <\/div> circuits, analog circuits, and power electronics. It is one of the most widely used types of transistors in the world.<\/p>\n<p>Here is a brief explanation of each option:<\/p>\n<ul>\n<li>Option A: p-type substrate of high doping level. This is not the correct answer because nMOSFETs are formed in n-type substrates.<\/li>\n<li>Option B: n-type substrate of low doping level. This is not the correct answer because nMOSFETs are formed in n-type substrates with a high doping level.<\/li>\n<li>Option C: p-type substrate of moderate doping level. This is not the correct answer because nMOSFETs are formed in n-type substrates.<\/li>\n<li>Option D: n-type substrate of high doping level. This is the correct answer because nMOSFETs are formed in n-type substrates with a high doping level.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>Join Our Telegram Channel Subscribe on YouTube<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[687],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v22.2 (Yoast SEO v23.3) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level\" \/>\n<meta property=\"og:description\" content=\"Join Our Telegram Channel Subscribe on YouTube\" \/>\n<meta property=\"og:url\" content=\"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/\" \/>\n<meta property=\"og:site_name\" content=\"MCQ and Quiz for Exams\" \/>\n<meta property=\"article:published_time\" content=\"2024-04-15T05:45:15+00:00\" \/>\n<meta name=\"author\" content=\"rawan239\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"rawan239\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/","og_locale":"en_US","og_type":"article","og_title":"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level","og_description":"Join Our Telegram Channel Subscribe on YouTube","og_url":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/","og_site_name":"MCQ and Quiz for Exams","article_published_time":"2024-04-15T05:45:15+00:00","author":"rawan239","twitter_card":"summary_large_image","twitter_misc":{"Written by":"rawan239","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/","url":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/","name":"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level","isPartOf":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/#website"},"datePublished":"2024-04-15T05:45:15+00:00","dateModified":"2024-04-15T05:45:15+00:00","author":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/5807dafeb27d2ec82344d6cbd6c3d209"},"breadcrumb":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/exam.pscnotes.com\/mcq\/nmos-devices-are-formed-in-a-p-type-substrate-of-high-doping-level-b-n-type-substrate-of-low-doping-level-c-p-type-substrate-of-moderate-doping-level-d-n-type-substrate-of-high-dop\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/exam.pscnotes.com\/mcq\/"},{"@type":"ListItem","position":2,"name":"mcq","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/"},{"@type":"ListItem","position":3,"name":"Electronics and communications engineering","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/electronics-and-communications-engineering\/"},{"@type":"ListItem","position":4,"name":"Vlsi design and testing","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/electronics-and-communications-engineering\/vlsi-design-and-testing\/"},{"@type":"ListItem","position":5,"name":"nMOS devices are formed in . . . . . . . . A. p-type substrate of high doping level B. n-type substrate of low doping level C. p-type substrate of moderate doping level D. n-type substrate of high doping level"}]},{"@type":"WebSite","@id":"https:\/\/exam.pscnotes.com\/mcq\/#website","url":"https:\/\/exam.pscnotes.com\/mcq\/","name":"MCQ and Quiz for Exams","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/exam.pscnotes.com\/mcq\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"en-US"},{"@type":"Person","@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/5807dafeb27d2ec82344d6cbd6c3d209","name":"rawan239","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/image\/","url":"https:\/\/secure.gravatar.com\/avatar\/d97f17072bfa490596c8f78363955d55?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/d97f17072bfa490596c8f78363955d55?s=96&d=mm&r=g","caption":"rawan239"},"sameAs":["https:\/\/exam.pscnotes.com"],"url":"https:\/\/exam.pscnotes.com\/mcq\/author\/rawan239\/"}]}},"amp_enabled":true,"_links":{"self":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts\/19862"}],"collection":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/comments?post=19862"}],"version-history":[{"count":0,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts\/19862\/revisions"}],"wp:attachment":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/media?parent=19862"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/categories?post=19862"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/tags?post=19862"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}