{"id":19824,"date":"2024-04-15T05:44:36","date_gmt":"2024-04-15T05:44:36","guid":{"rendered":"https:\/\/exam.pscnotes.com\/mcq\/?p=19824"},"modified":"2024-04-15T05:44:36","modified_gmt":"2024-04-15T05:44:36","slug":"what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci","status":"publish","type":"post","link":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/","title":{"rendered":"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning"},"content":{"rendered":"<p>\r\n    <!-- Check if it's an AMP page -->\r\n            <!-- Non-AMP version -->\r\n        <div class=\"mcq-container\" data-quiz-id=\"quizState_6a9ab65942283\">\r\n                                            <div class=\"option\" data-option-key=\"option1\" data-is-correct=\"false\">\r\n                    It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option2\" data-is-correct=\"false\">\r\n                    It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option3\" data-is-correct=\"false\">\r\n                    It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon                <\/div>\r\n                                            <div class=\"option\" data-option-key=\"option4\" data-is-correct=\"true\">\r\n                    It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning                <\/div>\r\n                            \r\n            <!-- Feedback messages for non-AMP -->\r\n            <div class=\"feedback\" data-feedback=\"wrong\">Answer is Right!<\/div>\r\n            <div class=\"feedback\" data-feedback=\"right\">Answer is Wrong!<\/div>\r\n        <\/div>\r\n\r\n        <script>\r\n        document.addEventListener('DOMContentLoaded', function () {\r\n            var containers = document.querySelectorAll('.mcq-container');\r\n\r\n            containers.forEach(function(container) {\r\n                var options = container.querySelectorAll('.option');\r\n                var feedbackSelect = container.querySelector('[data-feedback=\"select\"]');\r\n                var feedbackWrong = container.querySelector('[data-feedback=\"wrong\"]');\r\n                var feedbackRight = container.querySelector('[data-feedback=\"right\"]');\r\n\r\n                options.forEach(function(option) {\r\n                    option.addEventListener('click', function() {\r\n                        var selectedOption = option.getAttribute('data-option-key');\r\n                        var isCorrect = option.getAttribute('data-is-correct') === 'true';\r\n\r\n                        \/\/ Remove previous selections\r\n                        options.forEach(function(opt) {\r\n                            opt.classList.remove('correct', 'incorrect');\r\n                        });\r\n\r\n                        \/\/ Add the correct\/incorrect class\r\n                        if (isCorrect) {\r\n                            option.classList.add('correct');\r\n                            feedbackRight.hidden = false;\r\n                            feedbackWrong.hidden = true;\r\n                        } else {\r\n                            option.classList.add('incorrect');\r\n                            feedbackRight.hidden = true;\r\n                            feedbackWrong.hidden = false;\r\n                        }\r\n\r\n                        \/\/ Hide select feedback\r\n                        feedbackSelect.hidden = true;\r\n                    });\r\n                });\r\n            });\r\n        });\r\n        <\/script>\r\n    \r\n    <!--more--><\/p>\n<p>The correct answer is: D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning.<\/p>\n<p>Piranha solution is a mixture of sulfuric acid and hydrogen peroxide that is used to clean silicon wafers. It is a <div class=\"telegram-channel-container\">\r\n        <a href=\"https:\/\/t.me\/pscnotes2025\" target=\"_blank\" class=\"telegram-channel-button\">\r\n            <span class=\"telegram-icon\">\r\n                <svg xmlns=\"http:\/\/www.w3.org\/2000\/svg\" viewBox=\"0 0 496 512\">\r\n                    <path fill=\"white\" d=\"M248,8C111,8,0,119,0,256s111,248,248,248s248-111,248-248S385,8,248,8z M362,177L320,367c-3,14-10,18-20,14l-56-41l-27,26 c-3,3-5,5-10,5l4-63L323,196c5-5-1-7-8-3l-98,62l-42-13c-9-3-10-9,2-14l162-63C351,160,365,164,362,177z\"\/>\r\n                <\/svg>\r\n            <\/span>\r\n            Join Our Telegram Channel\r\n        <\/a>\r\n    <\/div> powerful oxidizing agent that can remove organic and <div class=\"youtube-subscribe-container\">\r\n        <a href=\"https:\/\/www.youtube.com\/channel\/UCNHT8lW-JmLC68rjBfZhdkg?sub_confirmation=1\" target=\"_blank\" class=\"youtube-subscribe-button\">\r\n            <span class=\"youtube-icon\">\r\n                <svg xmlns=\"http:\/\/www.w3.org\/2000\/svg\" viewBox=\"0 0 576 512\">\r\n                    <path d=\"M549.7 124.1c-6.3-23.7-24.8-42.3-48.3-48.6C458.8 64 288 64 288 64S117.2 64 74.6 75.5c-23.5 6.3-42 24.9-48.3 48.6-11.4 42.9-11.4 132.3-11.4 132.3s0 89.4 11.4 132.3c6.3 23.7 24.8 41.5 48.3 47.8C117.2 448 288 448 288 448s170.8 0 213.4-11.5c23.5-6.3 42-24.2 48.3-47.8 11.4-42.9 11.4-132.3 11.4-132.3s0-89.4-11.4-132.3zm-317.5 213.5V175.2l142.7 81.2-142.7 81.2z\"\/>\r\n                <\/svg>\r\n            <\/span>\r\n            Subscribe on YouTube\r\n        <\/a>\r\n    <\/div> metal contaminants from the surface of the wafer. Piranha solution is also used to etch silicon dioxide, which is the material that is used to create the oxide layer on silicon wafers.<\/p>\n<p>Piranha solution is a very dangerous chemical and should be handled with extreme care. It is corrosive and can cause serious burns if it comes into contact with skin or eyes. Piranha solution should always be stored in a cool, dark place and should never be mixed with other chemicals.<\/p>\n<p>Here is a brief explanation of each option:<\/p>\n<p>A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate. This is not correct. Piranha solution is a mixture of sulfuric acid and hydrogen peroxide, not nitric acid.<\/p>\n<p>B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning. This is not correct. Piranha solution is a mixture of sulfuric acid and hydrogen peroxide, not hydrofluoric acid.<\/p>\n<p>C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon. This is not correct. Piranha solution is a powerful oxidizing agent that can remove organic and metal contaminants from the surface of the wafer, but it cannot grow the oxide layer on the silicon.<\/p>\n<p>D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning. This is correct. Piranha solution is a powerful oxidizing agent that can remove organic and metal contaminants from the surface of the wafer. It is also used to etch silicon dioxide, which is the material that is used to create the oxide layer on silicon wafers.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Subscribe on YouTube<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[687],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v22.2 (Yoast SEO v23.3) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning\" \/>\n<meta property=\"og:description\" content=\"Join Our Telegram Channel Subscribe on YouTube\" \/>\n<meta property=\"og:url\" content=\"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/\" \/>\n<meta property=\"og:site_name\" content=\"MCQ and Quiz for Exams\" \/>\n<meta property=\"article:published_time\" content=\"2024-04-15T05:44:36+00:00\" \/>\n<meta name=\"author\" content=\"rawan239\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"rawan239\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/","og_locale":"en_US","og_type":"article","og_title":"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning","og_description":"Join Our Telegram Channel Subscribe on YouTube","og_url":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/","og_site_name":"MCQ and Quiz for Exams","article_published_time":"2024-04-15T05:44:36+00:00","author":"rawan239","twitter_card":"summary_large_image","twitter_misc":{"Written by":"rawan239","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/","url":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/","name":"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning","isPartOf":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/#website"},"datePublished":"2024-04-15T05:44:36+00:00","dateModified":"2024-04-15T05:44:36+00:00","author":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/5807dafeb27d2ec82344d6cbd6c3d209"},"breadcrumb":{"@id":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/exam.pscnotes.com\/mcq\/what-is-piranha-solution-a-it-is-a-3-1-to-5-1-mix-of-nitric-acid-and-hydrogen-peroxide-that-is-used-to-develop-the-oxide-layer-on-silicon-substrate-b-it-is-a-3-1-to-5-1-mix-of-sulphuric-aci\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/exam.pscnotes.com\/mcq\/"},{"@type":"ListItem","position":2,"name":"mcq","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/"},{"@type":"ListItem","position":3,"name":"Electronics and communications engineering","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/electronics-and-communications-engineering\/"},{"@type":"ListItem","position":4,"name":"Vlsi design and testing","item":"https:\/\/exam.pscnotes.com\/mcq\/category\/mcq\/electronics-and-communications-engineering\/vlsi-design-and-testing\/"},{"@type":"ListItem","position":5,"name":"What is Piranha Solution? A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning"}]},{"@type":"WebSite","@id":"https:\/\/exam.pscnotes.com\/mcq\/#website","url":"https:\/\/exam.pscnotes.com\/mcq\/","name":"MCQ and Quiz for Exams","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/exam.pscnotes.com\/mcq\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"en-US"},{"@type":"Person","@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/5807dafeb27d2ec82344d6cbd6c3d209","name":"rawan239","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/exam.pscnotes.com\/mcq\/#\/schema\/person\/image\/","url":"https:\/\/secure.gravatar.com\/avatar\/d97f17072bfa490596c8f78363955d55?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/d97f17072bfa490596c8f78363955d55?s=96&d=mm&r=g","caption":"rawan239"},"sameAs":["https:\/\/exam.pscnotes.com"],"url":"https:\/\/exam.pscnotes.com\/mcq\/author\/rawan239\/"}]}},"amp_enabled":true,"_links":{"self":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts\/19824"}],"collection":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/comments?post=19824"}],"version-history":[{"count":0,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/posts\/19824\/revisions"}],"wp:attachment":[{"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/media?parent=19824"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/categories?post=19824"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/exam.pscnotes.com\/mcq\/wp-json\/wp\/v2\/tags?post=19824"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}