{"id":19742,"date":"2024-04-15T05:43:30","date_gmt":"2024-04-15T05:43:30","guid":{"rendered":"https:\/\/exam.pscnotes.com\/mcq\/?p=19742"},"modified":"2024-04-15T05:43:30","modified_gmt":"2024-04-15T05:43:30","slug":"the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer","status":"publish","type":"post","link":"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/","title":{"rendered":"The n-well collector is formed by . . . . . . . . . A. Lightly doped n-type epitaxial layer on p-Substrate B. Heavily doped n-type epitaxial layer on p-Substrate C. Lightly doped n-type diffused layer on p-Substrate D. Heavily doped n-type diffused layer on p-Substrate"},"content":{"rendered":"<p>[amp_mcq option1=&#8221;Lightly doped n-type epitaxial layer on p-Substrate&#8221; option2=&#8221;Heavily doped n-type epitaxial layer on p-Substrate&#8221; option3=&#8221;Lightly doped n-type diffused layer on p-Substrate&#8221; option4=&#8221;Heavily doped n-type diffused layer on p-Substrate&#8221; correct=&#8221;option4&#8243;]<!--more--><\/p>\n<p>The correct answer is: <strong>D. Heavily doped n-type diffused layer on p-Substrate<\/strong><\/p>\n<p>An n-well collector is a type of semiconductor device that is used in integrated circuits. It is formed by diffusing a heavily doped n-type region into a p-type substrate. This creates a region of high-concentration n-type material that is surrounded by p-type material. The n-well collector is used to collect electrons that are emitted from the emitter region of the transistor.<\/p>\n<p>The other options are incorrect because they do not describe the correct way to form an n-well collector. Option A describes a lightly doped n-type epitaxial layer on a p-substrate. This is not the correct way to form an n-well collector. Option B describes a heavily doped n-type epitaxial layer on a p-substrate. This is also not the correct way to form an n-well collector. Option C describes a lightly doped n-type diffused layer on a p-substrate. This is not the correct way to form an n-well collector.<\/p>\n<p>I hope this explanation is helpful. Please let me know if you have any other questions.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>[amp_mcq option1=&#8221;Lightly doped n-type epitaxial layer on p-Substrate&#8221; option2=&#8221;Heavily doped n-type epitaxial layer on p-Substrate&#8221; option3=&#8221;Lightly doped n-type diffused layer on p-Substrate&#8221; option4=&#8221;Heavily doped n-type diffused layer on p-Substrate&#8221; correct=&#8221;option4&#8243;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[687],"tags":[],"class_list":["post-19742","post","type-post","status-publish","format-standard","hentry","category-vlsi-design-and-testing","no-featured-image-padding"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v22.2 (Yoast SEO v23.3) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>The n-well collector is formed by . . . . . . . . . A. Lightly doped n-type epitaxial layer on p-Substrate B. Heavily doped n-type epitaxial layer on p-Substrate C. Lightly doped n-type diffused layer on p-Substrate D. Heavily doped n-type diffused layer on p-Substrate<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"The n-well collector is formed by . . . . . . . . . A. Lightly doped n-type epitaxial layer on p-Substrate B. Heavily doped n-type epitaxial layer on p-Substrate C. Lightly doped n-type diffused layer on p-Substrate D. 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A. Lightly doped n-type epitaxial layer on p-Substrate B. Heavily doped n-type epitaxial layer on p-Substrate C. Lightly doped n-type diffused layer on p-Substrate D. Heavily doped n-type diffused layer on p-Substrate","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/","og_locale":"en_US","og_type":"article","og_title":"The n-well collector is formed by . . . . . . . . . A. Lightly doped n-type epitaxial layer on p-Substrate B. Heavily doped n-type epitaxial layer on p-Substrate C. Lightly doped n-type diffused layer on p-Substrate D. Heavily doped n-type diffused layer on p-Substrate","og_description":"[amp_mcq option1=&#8221;Lightly doped n-type epitaxial layer on p-Substrate&#8221; option2=&#8221;Heavily doped n-type epitaxial layer on p-Substrate&#8221; option3=&#8221;Lightly doped n-type diffused layer on p-Substrate&#8221; option4=&#8221;Heavily doped n-type diffused layer on p-Substrate&#8221; correct=&#8221;option4&#8243;]","og_url":"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/","og_site_name":"MCQ and Quiz for Exams","article_published_time":"2024-04-15T05:43:30+00:00","author":"rawan239","twitter_card":"summary_large_image","twitter_misc":{"Written by":"rawan239","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/","url":"https:\/\/exam.pscnotes.com\/mcq\/the-n-well-collector-is-formed-by-a-lightly-doped-n-type-epitaxial-layer-on-p-substrate-b-heavily-doped-n-type-epitaxial-layer-on-p-substrate-c-lightly-doped-n-type-diffused-layer\/","name":"The n-well collector is formed by . . . . . . . . . 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