[amp_mcq option1=”Etched field-oxide isolation” option2=”Local Oxidation of Silicon” option3=”Etched field-oxide isolation or Local Oxidation of Silicon” option4=”None of the mentioned” correct=”option3″]<\/p>\n
The correct answer is: C. Etched field-oxide isolation or Local Oxidation of Silicon<\/strong><\/p>\n Etched field-oxide isolation (EFO) and Local Oxidation of Silicon (LOCOS) are two techniques used to create isolated active areas in integrated circuits. EFO is a process in which a thin layer of silicon dioxide is etched away from the surface of a silicon wafer, leaving behind isolated islands of silicon. LOCOS is a process in which a thin layer of silicon dioxide is grown on the surface of a silicon wafer, and then the silicon dioxide is selectively etched away, leaving behind isolated islands of silicon.<\/p>\n Both EFO and LOCOS are effective techniques for creating isolated active areas, but they have different advantages and disadvantages. EFO is a simpler process than LOCOS, but it can create smaller isolated areas. LOCOS is a more complex process than EFO, but it can create larger isolated areas.<\/p>\n The choice of which technique to use depends on the specific requirements of the integrated circuit being designed.<\/p>\n A. Etched field-oxide isolation is a process in which a thin layer of silicon dioxide is etched away from the surface of a silicon wafer, leaving behind isolated islands of silicon. This process is used to create isolated active areas in integrated circuits.<\/p>\n B. Local Oxidation of Silicon is a process in which a thin layer of silicon dioxide is grown on the surface of a silicon wafer, and then the silicon dioxide is selectively etched away, leaving behind isolated islands of silicon. This process is also used to create isolated active areas in integrated circuits.<\/p>\n C. Etched field-oxide isolation or Local Oxidation of Silicon are two techniques used to create isolated active areas in integrated circuits. The choice of which technique to use depends on the specific requirements of the integrated circuit being designed.<\/p>\n D. None of the mentioned is not the correct answer.<\/p>\n","protected":false},"excerpt":{"rendered":" [amp_mcq option1=”Etched field-oxide isolation” option2=”Local Oxidation of Silicon” option3=”Etched field-oxide isolation or Local Oxidation of Silicon” option4=”None of the mentioned” correct=”option3″]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[687],"tags":[],"class_list":["post-19736","post","type-post","status-publish","format-standard","hentry","category-vlsi-design-and-testing","no-featured-image-padding"],"yoast_head":"\n