The correct answer is C. Cg(MOS) lesser than Cbase(bipolar).
The gate capacitance (Cg) of a MOSFET is the capacitance between the gate and the channel. The base capacitance (Cbase) of a bipolar transistor is the capacitance between the base and the emitter.
When inputs are controlled by equal amounts of charge, the gate capacitance of a MOSFET is always less than the base capacitance of a bipolar transistor. This is because the gate of a MOSFET is a metal-oxide-semiconductor (MOS) structure, while the base of a bipolar transistor is a semiconductor material. The MOS structure has a much higher capacitance than the semiconductor material.
The following is a brief explanation of each option:
- Option A: Cg(MOS) = Cbase(bipolar) is not true. The gate capacitance of a MOSFET is always less than the base capacitance of a bipolar transistor.
- Option B: Cg(MOS) greater than Cbase(bipolar) is not true. The gate capacitance of a MOSFET is always less than the base capacitance of a bipolar transistor.
- Option C: Cg(MOS) lesser than Cbase(bipolar) is true. The gate capacitance of a MOSFET is always less than the base capacitance of a bipolar transistor.
- Option D: Cs(MOS) lesser than Cbase(bipolar) is not true. The gate-source capacitance (Cs) of a MOSFET is always greater than the base-emitter capacitance (Cbe) of a bipolar transistor.