Which is the commonly used bulk substrate in nMOS fabrication? A. Silicon crystal B. Silicon-on-sapphire C. Phosphorus D. Silicon-di-oxide

Silicon crystal
Silicon-on-sapphire
Phosphorus
Silicon-di-oxide

The correct answer is A. Silicon crystal.

A bulk substrate is a piece of semiconductor material that is used as the foundation for a semiconductor device. The most common type of bulk substrate is silicon crystal, which is a single crystal of silicon. Silicon crystals are grown by the Czochralski process, which involves melting silicon and then slowly pulling a single crystal out of the melt.

Silicon-on-sapphire (SOS) is a type of semiconductor material that is made by growing a thin layer of silicon on a sapphire substrate. SOS is used in some high-performance applications because it has better thermal conductivity than silicon crystal.

Phosphorus is a chemical element that is used as a dopant in silicon to create n-type silicon. Doping is the process of adding impurities to a semiconductor material to change its electrical properties.

Silicon dioxide (SiO2) is a type of semiconductor material that is used as an insulator in semiconductor devices. SiO2 is also used as a passivation layer on the surface of silicon wafers.

In conclusion, the most common type of bulk substrate used in nMOS fabrication is silicon crystal.