The mobility of a charge carrier is a measure of how easily it can move through a material in response to an electric field. The mobility of a proton or hole at room temperature is about 240 cm2/V sec. This means that a proton or hole in a semiconductor will move about 240 cm for every volt of electric field applied.
The mobility of a charge carrier depends on the material it is in and the temperature. In general, the mobility of electrons is higher than the mobility of holes. This is because electrons are more mobile than holes because they are not bound to the atoms in the material.
The mobility of charge carriers is important in semiconductor devices. The mobility of electrons and holes determines the speed at which current can flow through a semiconductor device. This is why it is important to choose materials with high mobilities for semiconductor devices.
The following are the options for the question:
- A. 650 cm2/V sec
- B. 260 cm2/V sec
- C. 240 cm2/V sec
- D. 500 cm2/V sec
The correct answer is C. 240 cm2/V sec.
Option A is incorrect because the mobility of a proton or hole at room temperature is about 240 cm2/V sec, not 650 cm2/V sec.
Option B is incorrect because the mobility of a proton or hole at room temperature is about 240 cm2/V sec, not 260 cm2/V sec.
Option D is incorrect because the mobility of a proton or hole at room temperature is about 240 cm2/V sec, not 500 cm2/V sec.