[amp_mcq option1=”Lightly doped n-type epitaxial layer on p-Substrate” option2=”Heavily doped n-type epitaxial layer on p-Substrate” option3=”Lightly doped n-type diffused layer on p-Substrate” option4=”Heavily doped n-type diffused layer on p-Substrate” correct=”option4″]
The correct answer is: D. Heavily doped n-type diffused layer on p-Substrate
An n-well collector is a type of semiconductor device that is used in integrated circuits. It is formed by diffusing a heavily doped n-type region into a p-type substrate. This creates a region of high-concentration n-type material that is surrounded by p-type material. The n-well collector is used to collect electrons that are emitted from the emitter region of the transistor.
The other options are incorrect because they do not describe the correct way to form an n-well collector. Option A describes a lightly doped n-type epitaxial layer on a p-substrate. This is not the correct way to form an n-well collector. Option B describes a heavily doped n-type epitaxial layer on a p-substrate. This is also not the correct way to form an n-well collector. Option C describes a lightly doped n-type diffused layer on a p-substrate. This is not the correct way to form an n-well collector.
I hope this explanation is helpful. Please let me know if you have any other questions.