[amp_mcq option1=”Zero static power dissipation” option2=”High Input impedance” option3=”Both zero static power dissipation and high input impedance” option4=”None of the mentioned” correct=”option3″]
The correct answer is: C. Both zero static power dissipation and high input impedance.
MOSFETs are arranged in a cascode configuration to provide both zero static power dissipation and high input impedance. In a cascode configuration, the gate of the second MOSFET is connected to the drain of the first MOSFET. This means that the gate of the second MOSFET is at a higher voltage than the source of the first MOSFET. This prevents current from flowing through the gate of the second MOSFET, which results in zero static power dissipation.
The cascode configuration also provides high input impedance. This is because the gate of the second MOSFET is connected to the drain of the first MOSFET. The drain of the first MOSFET is connected to the source of the second MOSFET. This means that the gate of the second MOSFET is at a higher voltage than the source of the first MOSFET. This prevents current from flowing through the gate of the second MOSFET, which results in high input impedance.
A. Zero static power dissipation is achieved by connecting the gate of the second MOSFET to the drain of the first MOSFET. This prevents current from flowing through the gate of the second MOSFET, which results in zero static power dissipation.
B. High Input impedance is achieved by connecting the gate of the second MOSFET to the drain of the first MOSFET. This means that the gate of the second MOSFET is at a higher voltage than the source of the first MOSFET. This prevents current from flowing through the gate of the second MOSFET, which results in high input impedance.
D. None of the mentioned is not the correct answer.