The majority charge carriers in a p-type semiconductor are

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free electrons

conduction electrons

ions

holes

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This question was previously asked in

UPSC NDA-2 – 2017

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A p-type semiconductor is created by doping an intrinsic semiconductor (like silicon or germanium) with trivalent impurity atoms (like boron, gallium, or indium). Trivalent atoms have three valence electrons. When a trivalent atom substitutes a semiconductor atom (which has four valence electrons), there is a deficiency of one electron to form a complete covalent bond with the surrounding semiconductor atoms. This deficiency is called a “hole.” These holes can accept electrons from neighboring bonds and effectively move through the crystal lattice, acting as positive charge carriers. In a p-type semiconductor, the number of holes is much greater than the number of free electrons (which are present due to thermal generation), making holes the majority charge carriers.

– P-type semiconductors are created by doping with trivalent impurities.
– Trivalent impurities create electron deficiencies called holes.
– Holes act as positive charge carriers.
– In p-type semiconductors, holes are the majority charge carriers.

In contrast, n-type semiconductors are created by doping with pentavalent impurity atoms (like phosphorus, arsenic, or antimony). Pentavalent atoms have five valence electrons, one more than needed for covalent bonding with four neighbors. This extra electron is loosely bound and easily becomes a free electron, which acts as a negative charge carrier. In n-type semiconductors, free electrons are the majority charge carriers. Ions (the doping atoms fixed in the lattice) are not mobile charge carriers.

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