In bipolar transistor, which is heavily doped? A. Base region B. Emitter region C. Collector region D. Base and emitter

Base region
Emitter region
Collector region
Base and emitter

The correct answer is: A. Base region

The base region is the thin region between the emitter and collector regions of a bipolar transistor. It is heavily doped with impurities to increase the number of charge carriers (electrons or holes) available for conduction. This allows the transistor to amplify a small input signal into a larger output signal.

The emitter region is also heavily doped, but to a lesser extent than the base region. This is because the emitter region is where the majority of the current flows through the transistor. The collector region is lightly doped, and its main purpose is to collect the current that flows from the emitter region.

The base region is the most important region in a bipolar transistor, as it determines the transistor’s performance. The thickness of the base region and the doping concentration of the base region are two of the most important factors that affect the transistor’s gain.

The base region is also the most vulnerable region in a bipolar transistor. If the base region is too thin, the transistor can become unstable and oscillate. If the base region is too heavily doped, the transistor can become saturated and stop working properly.

The base region is a critical part of a bipolar transistor, and its design and fabrication are critical to the transistor’s performance.

Exit mobile version