[amp_mcq option1=”TRUE” option2=”nan” option3=”nan” option4=”nan” correct=”option2″]
The answer is False. Depletion-mode MOSFETs are typically smaller than enhancement-mode MOSFETs. This is because the depletion-mode MOSFET has a channel that is already partially depleted of charge carriers, so it does not need to be as large to achieve the same level of conductivity.
In an enhancement-mode MOSFET, the channel is initially depleted of charge carriers, and a gate voltage is applied to induce a channel of charge carriers. This requires a larger gate voltage than a depletion-mode MOSFET, which has a channel that is already partially depleted of charge carriers.
The size of a MOSFET is also affected by the type of substrate material used. Silicon-on-insulator (SOI) MOSFETs are typically smaller than bulk MOSFETs because the SOI substrate is thinner. This allows the gate to be closer to the channel, which reduces the gate capacitance and improves the switching speed of the MOSFET.
In conclusion, depletion-mode MOSFETs are typically smaller than enhancement-mode MOSFETs because they do not need to be as large to achieve the same level of conductivity. The size of a MOSFET is also affected by the type of substrate material used.