Vlsi design and testing

3. The collector contact region is doped with higher concentration of n-type impurities due to . . . . . . . . A. It creates a depletion region at the contact surface B. It creates a low conductivity path between collector region and contact C. It reduces contact resistance D. It can withstand high voltages as compared to collector region

It creates a depletion region at the contact surface
It creates a low conductivity path between collector region and contact
It reduces contact resistance
It can withstand high voltages as compared to collector region

Detailed SolutionThe collector contact region is doped with higher concentration of n-type impurities due to . . . . . . . . A. It creates a depletion region at the contact surface B. It creates a low conductivity path between collector region and contact C. It reduces contact resistance D. It can withstand high voltages as compared to collector region

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