The correct answer is B. False.
The transconductance (gm) of a transistor is a measure of how much current it can source or sink for a given change in voltage. In general, the gm of a MOSFET is much higher than the gm of a bipolar transistor. This is because the channel of a MOSFET is much wider than the base of a bipolar transistor. As a result, a MOSFET can handle more current for the same voltage change.
However, there are some cases where the gm of a bipolar transistor can be higher than the gm of a MOSFET. This can happen when the bipolar transistor is operated in a special mode called the “Darlington configuration.” In this configuration, the collector of one transistor is connected to the base of another transistor. This effectively increases the gain of the transistor, and can also increase its gm.
In general, though, the gm of a MOSFET is much higher than the gm of a bipolar transistor. This is why MOSFETs are often used in applications where high current gain is required, such as power amplifiers.