The high current driving capability of the BiCMOS is due to . . . . . . . . A. NMOS in saturation mode B. PMOS in saturation mode C. CMOS D. BJT

NMOS in saturation mode
PMOS in saturation mode
CMOS
BJT

The correct answer is: D. BJT

BJTs are bipolar junction transistors, which means they have three terminals: base, emitter, and collector. When a small current is applied to the base, a much larger current can be amplified and passed through the collector. This makes BJTs ideal for high-current applications.

NMOS and PMOS are both types of MOSFETs, which are metal-oxide-semiconductor field-effect transistors. MOSFETs work by controlling the flow of current through a semiconductor material using an electric field. NMOS transistors are made of a material that is more conductive when a negative voltage is applied to the gate, while PMOS transistors are made of a material that is more conductive when a positive voltage is applied to the gate.

CMOS is a complementary metal-oxide-semiconductor technology that uses both NMOS and PMOS transistors. CMOS is very efficient because it only draws current when it is switching states. However, it does not have the high current driving capability of BJTs.

In conclusion, the high current driving capability of the BiCMOS is due to the use of BJTs.